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| SMD Type HEXFET Power MOSFET KRF4905S TO-263 Features Advanced Process Technology Surface Mount + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 175 Operating Temperature Fast Switching P-Channel Fully Avalanche Rated +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ -10V,Tc = 25 Continuous Drain Current, VGS @ -10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Tc = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*4 Avalanche Current *1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Operating Junction and Storage Temperature Range Junction-to-Case Junction-to-Ambient VGS EAS IAR EAR dv/dt TJ,TSTG R R JC JA Symbol ID ID IDM PD Rating -74 -52 -260 3.8 200 1.3 20 930 -38 20 -5 -55 to + 175 0.75 40 Unit A W W/ V mJ A mJ V/ns /W /W *1Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -38A, di/dt -270A/ s, VDD V(BR)DSS,TJ 175 * 3 When mounted on 1" square PCB *4 Starting TJ = 25 , L = 1.3mH,RG = 25 , IAS = -38A. 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KRF4905S Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss IS ISM VSD trr Qrr ton TJ = 25 , IS = -38A, VGS = 0V*1 TJ = 25 , IF = -38A di/dt = 100A/ s*1 Symbol V(BR)DSS V(BR)DSS/ Transistors IC Testconditons VGS = 0V, ID =- 250 A TJ ID = -1mA,Reference to 25 VGS = -10V, ID = -38A*1 VDS = VGS, ID = -250 A VDS = -25V, ID = -38A*1 VDS = -55V, VGS = 0V VDS = -44V, VGS = 0V, TJ = 150 Min -55 Typ Max Unit V -0.05 0.02 -2.0 21 -25 -250 100 -100 180 32 86 18 99 61 96 7.5 3400 1400 640 -74 -4 V/ m V S A RDS(on) VGS(th) gfs IDSS IGSS VGS = 20V VGS = -20V ID = -38A VDS = -44V VGS = -10V,*1 VDD = -28V ID = -38A RG =2.5 RD =0.72 *1 Between lead,and center of die contact VGS = 0V VDS = -25V f = 1.0MHz nA nC ns nH pF A Body Diode) *2 -260 -1.6 89 230 130 350 V ns nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
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